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PDF FP2250QFN Data sheet ( Hoja de datos )
| Número de pieza | FP2250QFN | |
| Descripción | PACKAGED LOW NOISE / HIGH LINEARITY PHEMT | |
| Fabricantes | Filtronic | |
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Preliminary Data Sheet FP2250QFN
PACKAGED LOW NOISE, HIGH LINEARITY PHEMT
• FEATURES
♦ 29 dBm Output Power at 1-dB Compression
♦ 17 dB Power Gain at 2 GHz
♦ 1.0 dB Noise Figure at 2 GHz
♦ 42 dBm Output IP3
♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The FP2250QFN is a high performance, leadless, encapsulated packaged Aluminum Gallium
Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by electron-
beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source
and gate resistance. The epitaxial structure and processing have been optimized for reliable high-
power applications. The FP2250’s active areas are passivated with Si3N4, and the QFN package is
ideal for low-cost, high-performance applications that require a surface-mount package. Typical
applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems,
and other types of wireless infrastructure systems up to 10 GHz.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current
FP2250QFN-1
FP2250QFN-2
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
All RF data tested at 2.0 GHz
IDSS
P-1dB
G-1dB
PAE
NF
IP3
IMAX
GM
IGSO
VP
VBDGS
VBDGD
VDS = 2 V; VGS = 0 V
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 11 mA
IGS = 11 mA
IGD = 11 mA
Min Typ Max Units
560 635 705 mA
706 770 850 mA
27 29
dBm
16 17
dB
50 %
1.0 dB
42 dBm
840 mA
550 mS
115 µA
-2.0 -0.25 V
-10 -12
V
-10 -12
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 10/18/02
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FP2250QFN.PDF ] | |
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