DataSheetWiki


UT28F256 fiches techniques PDF

Aeroflex Circuit Technology - Radiation-Hardened 32K x 8 PROM

Numéro de référence UT28F256
Description Radiation-Hardened 32K x 8 PROM
Fabricant Aeroflex Circuit Technology 
Logo Aeroflex Circuit Technology 





1 Page

No Preview Available !





UT28F256 fiche technique
Standard Products
UT28F256www.DataSheet4U.com Radiation-Hardened 32K x 8 PROM
Data Sheet
December 2002
FEATURES
q Programmable, read-only, asynchronous, radiation-
hardened, 32K x 8 memory
- Supported by industry standard programmer
q 45ns and 40ns maximum address access time (-55 oC to
+125 oC)
q TTL compatible input and TTL/CMOS compatible output
levels
q Three-state data bus
q Low operating and standby current
- Operating: 125mA maximum @25MHz
Derating: 3mA/MHz
- Standby: 2mA maximum (post-rad)
q Radiation-hardened process and design; total dose
irradiation testing to MIL-STD-883, Method 1019
- Total dose: 1E6 rad(Si)
- LETTH(0.25) ~ 100 MeV-cm2/mg
- SEL Immune >128 MeV-cm2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous
heavy ion
- Memory cell LET threshold: >128 MeV-cm2/mg
q QML Q & V compliant part
- AC and DC testing at factory
q Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
q VDD: 5.0 volts + 10%
q Standard Microcircuit Drawing 5962-96891
PRODUCT DESCRIPTION
The UT28F256 amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
32K x 8 programmable memory device. The UT28F256 PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the UT28F256.
The combination of radiation-hardness, fast access time, and low
power consumption make the UT28F256 ideal for high speed
systems designed for operation in radiation environments.
A(14:0)
DECODER
MEMORY
ARRAY
CE
CONTROL
PE LOGIC
OE
SENSE AMPLIFIER
PROGRAMMING
Figure 1. PROM Block Diagram
DQ(7:0)
1

PagesPages 11
Télécharger [ UT28F256 ]


Fiche technique recommandé

No Description détaillée Fabricant
UT28F256 Radiation-Hardened 32K x 8 PROM Aeroflex Circuit Technology
Aeroflex Circuit Technology
UT28F256LV Radiation-Hardened 32K x 8 PROM Aeroflex Circuit Technology
Aeroflex Circuit Technology

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche