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Guangdong Kexin Industrial - 100V Dual N-Channel PowerTrench MOSFET

Numéro de référence KDS3601
Description 100V Dual N-Channel PowerTrench MOSFET
Fabricant Guangdong Kexin Industrial 
Logo Guangdong Kexin Industrial 





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KDS3601 fiche technique
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SMD Type
100V Dual N-Channel PowerTrench MOSFET
KDS3601
ICIC
Features
1.3 A, 100 V. RDS(ON) = 480m @ VGS = 10 V
RDS(ON) = 530m @ VGS = 6 V
Low gate charge (3.7 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Case (Note 1)
Thermal Resistance Junction to Ambient (Note 1a)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
Rating
100
20
1.3
6
2
1.6
1
0.9
-55 to 175
40
78
Unit
V
V
A
A
W
/W
/W
www.kexin.com.cn 1

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