|
|
Numéro de référence | KDS3601 | ||
Description | 100V Dual N-Channel PowerTrench MOSFET | ||
Fabricant | Guangdong Kexin Industrial | ||
Logo | |||
www.DataSheet4U.com
SMD Type
100V Dual N-Channel PowerTrench MOSFET
KDS3601
ICIC
Features
1.3 A, 100 V. RDS(ON) = 480m @ VGS = 10 V
RDS(ON) = 530m @ VGS = 6 V
Low gate charge (3.7 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Case (Note 1)
Thermal Resistance Junction to Ambient (Note 1a)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
Rating
100
20
1.3
6
2
1.6
1
0.9
-55 to 175
40
78
Unit
V
V
A
A
W
/W
/W
www.kexin.com.cn 1
|
|||
Pages | Pages 2 | ||
Télécharger | [ KDS3601 ] |
No | Description détaillée | Fabricant |
KDS3601 | 100V Dual N-Channel PowerTrench MOSFET | Guangdong Kexin Industrial |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |