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Numéro de référence | 2SC1971 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
DESCRIPTION
·High Power Gain-
: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage RBE= ∞
wwwEmitter-Base Voltage
VALUE UNIT
35 V
17 V
4V
IC Collector Current
2A
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
12.5
W
1.5
Tj Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC1971 ] |
No | Description détaillée | Fabricant |
2SC1970 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) | Mitsubishi Electric Semiconductor |
2SC1970 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC1971 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) | Mitsubishi Electric Semiconductor |
2SC1971 | Silicon NPN Power Transistor | Inchange Semiconductor |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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