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2SC1971 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC1971
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC1971 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
DESCRIPTION
·High Power Gain-
: Gpe10dB,f= 175MHz, PO= 6W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage RBE=
wwwEmitter-Base Voltage
VALUE UNIT
35 V
17 V
4V
IC Collector Current
2A
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
12.5
W
1.5
Tj Junction Temperature
150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83 /W
Rth j-c Thermal Resistance,Junction to Case
10 /W
isc Websitewww.iscsemi.cn

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