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Fairchild Semiconductor - Dual N & P-Channel PowerTrench MOSFET

Numéro de référence FDS4895C
Description Dual N & P-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS4895C fiche technique
www.DataSheet4U.com
June 2005
FDS4895C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
Motor Control
DC/DC conversion
Features
Q1: N-Channel
5.5A, 40V RDS(on) = 39m@ VGS = 10V
RDS(on) = 57m@ VGS = 7V
Q2: P-Channel
–4.4A, –40V RDS(on) = 46m@ VGS = –10V
RDS(on) = 63m@ VGS = –4.5V
High power and handling capability in a widely
used surface mount package
DD2DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4895C
FDS4895C
13”
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
40 40
±20 ±20
5.5 –4.4
20 –20
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS4895C Rev C(W)

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