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SemiWell Semiconductor - Silicon Controlled Rectifiers

Numéro de référence SCF25C60
Description Silicon Controlled Rectifiers
Fabricant SemiWell Semiconductor 
Logo SemiWell Semiconductor 





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SCF25C60 fiche technique
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SemiWell Semiconductor
SCF25C60
Silicon Controlled Rectifiers
Symbol
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 25 A )
Low On-State Voltage (1.3V(Typ.)@ ITM)
Isolation Voltage ( VISO = 1500V AC )
General Description
2. Anode
TO-220F
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
123
3. Gate
1. Cathode
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 69 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt Critical rate of rise of on-state current
PGM
PG(AV)
IFGM
VRGM
VISO
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Over any 20ms period
A.C. 1 minute
Ratings
600
16
25
275
380
50
20
1
5
5.0
1500
- 40 ~ 125
- 40 ~ 150
Aug, 2003. Rev. 1
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Units
V
A
A
A
A2s
A/
W
W
A
V
V
°C
°C
1/5

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