|
|
Numéro de référence | MBR860 | ||
Description | (MBR850 / MBR860) Wide Temperature Range and High Tjm Schottky Barrier Rectifiers | ||
Fabricant | Sirectifier Semiconductors | ||
Logo | |||
1 Page
www.DataSheet4U.com
MBR850 thru MBR860
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
C(TAB)
A
A
C
C
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V VV
MBR850
50 35 50
MBR860
60 42 60
Dimensions TO-220AC
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IF=8A @TJ=125oC
IF=8A @TJ=25oC
IF=16A @TJ=25oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=125oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
8
150
10000
0.70
0.80
0.95
0.1
15
3.0
250
-55 to +150
-55 to +175
Unit
A
A
V/us
V
mA
oC/W
pF
oC
oC
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
|
|||
Pages | Pages 2 | ||
Télécharger | [ MBR860 ] |
No | Description détaillée | Fabricant |
MBR860 | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
MBR860 | 8.0A SCHOTTKY BARRIER RECTIFIER | Diodes Incorporated |
MBR860 | SCHOTTKY BARRIER RECTIFIERS | Pan Jit International |
MBR860 | Schottky Barrier Rectifiers | LGE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |