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PDF FS25SM-9A Data sheet ( Hoja de datos )
| Número de pieza | FS25SM-9A | |
| Descripción | Power MOSFETs | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FS25SM-9A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
16 400V
200V
12 VDS = 100V
8
4
TCh = 25°C
ID = 25A
0
0 80 160 240 320 400
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS25SM-9A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
32
24 TC = 125°C
75°C
25°C
16
8
VGS = 0V
Pulse Test
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = 10V
5 ID = 12A
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100
7
D = 1.0
5 = 0.5
3
2 = 0.2
PDM
10–1 = 0.1
7
5
= 0.05
tw
T
3
2
Single Pulse
= 0.02
= 0.01
D= tw
T
10–210–42 3 5 710–32 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Sep. 2001
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet FS25SM-9A.PDF ] | |
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