(PDF) KRFR9310 Datasheet - HEXFET Power MOSFET

Número de pieza	KRFR9310
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRFR9310 TransistIoCrs Features Surface Mount Fast Switching P-Channel Avanced Process Technology Fully Avalanche Rated TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ -10V,Tc = 25 ID Continuous Drain Current, VGS @ -10V,Tc = 100 ID Pulsed Drain Current1 IDM Power Dissipation Tc = 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Single Pulse Avalanche Energy3 EAS Avalanche Current 1 IAR Repetitive Avalanche Energy 1 EAR Peak Diode Recovery dv/dt 2 dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Junction-to-Case R JC Junction-to-Ambient R JA Junction-to-Ambient R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 ISD -1.1A, di/dt 450A/ s, VDD V(BR)DSS,TJ 150 3 Starting TJ = 25 , L = 57 mH,RG = 25 , IAS = -1.8A. Rating -1.8 -1.1 -7.2 50 0.4 20 92 -1.8 5 -24 -55 to + 150 2.5 50 110 Unit A W W/ V mJ A mJ V/ns /W /W /W www.kexin.com.cn 1 1 page

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PDF KRFR9310 Data sheet ( Hoja de datos )