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PDF KRF9952 Data sheet ( Hoja de datos )
| Número de pieza | KRF9952 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KRF9952 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SMD Type
HEXFET Power MOSFET
KRF9952
ICIC
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Very Low Gate Charge and Switching Losses
Fully Avalanche Rated
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-to-Source Voltage
VGS
Continuous Drain Current, VGS @ 10V @ Ta = 25
ID
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 N-Channel ISD 2.0A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -1.3A, di/dt 84A/ s, VDD V(BR)DSS, TJ 150
*3 Surface mounted on FR-4 board, t 10sec.
N-Channel
P-Channel
30
20
3.5 -2.3
2.8 -1.8
16 -10
1.7 -1.3
2
1.3
44 57
2.0 -1.3
0.25
5.0 -5
-55 to + 150
62.5
Unit
V
V
A
A
W
mJ
A
mJ
V/ns
/W
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KRF9952.PDF ] | |
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