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Numéro de référence | KRF7663 | ||
Description | HEXFET Power MOSFET | ||
Fabricant | Guangdong Kexin Industrial | ||
Logo | |||
SMD Type
HEXFET Power MOSFET
KRF7663
Features
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Single Pulse Avalanche Energy *2
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A
*3 When mounted on 1 inch square copper board, t 10 sec
Rating
-20
-8.2
-6.6
-66
1.8
1.15
10
115
12
-55 to + 150
70
Unit
V
A
W
mW/
mJ
V
/W
www.kexin.com.cn 1
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Pages | Pages 2 | ||
Télécharger | [ KRF7663 ] |
No | Description détaillée | Fabricant |
KRF7663 | HEXFET Power MOSFET | Guangdong Kexin Industrial |
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