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KRF7663 fiches techniques PDF

Guangdong Kexin Industrial - HEXFET Power MOSFET

Numéro de référence KRF7663
Description HEXFET Power MOSFET
Fabricant Guangdong Kexin Industrial 
Logo Guangdong Kexin Industrial 





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KRF7663 fiche technique
SMD Type
HEXFET Power MOSFET
KRF7663
Features
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
Power Dissipation
@Ta= 25
@Ta= 70
PD
Linear Derating Factor
Single Pulse Avalanche Energy *2
EAS
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A
*3 When mounted on 1 inch square copper board, t 10 sec
Rating
-20
-8.2
-6.6
-66
1.8
1.15
10
115
12
-55 to + 150
70
Unit
V
A
W
mW/
mJ
V
/W
www.kexin.com.cn 1

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