(PDF) KRF7606 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7606
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7606 Features Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ -10V @ Ta = 25 ID Continuous Drain Current, VGS @ -10V @ Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 PD Linear Derating Factor Gate-to-Source Voltage VGS Gate-to-Source Voltage Single Pulse tp 10 S VGSM Peak Diode Recovery dv/dt 2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient 3 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 ISD -2.4A, di/dt -130A/ s, VDD V(BR)DSS,TJ 150 3 Surface mounted on FR-4 board, t 10sec. Rating -30 -3.6 -2.9 -29 1.8 1.1 14 20 30 -5.0 -55 to + 150 70 Unit V A W mW/ V V V/ns /W www.kexin.com.cn 1 1 page

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PDF KRF7606 Data sheet ( Hoja de datos )