(PDF) KRF7530 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7530
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7530 Features Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ 4.5V,Ta = 25 ID Continuous Drain Current, VGS @ 4.5V,TA = 70 ID Pulsed Drain Current1 IDM Power Dissipation Ta = 25 PD Power Dissipation Ta = 70 PD Linear Derating Factor Single Pulse Avalanche Energy 2 EAS Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Junction-to-Ambient 1 R JA 1 Surface mounted on FR-4 board, t 10sec. *2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A. Rating 20 5.4 4.3 40 1.3 0.8 10 33 12 -55 to + 150 100 Unit A A W mW/ mJ V /W www.kexin.com.cn 1 1 page

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PDF KRF7530 Data sheet ( Hoja de datos )