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KRF7501 fiches techniques PDF

Guangdong Kexin Industrial - HEXFET Power MOSFET

Numéro de référence KRF7501
Description HEXFET Power MOSFET
Fabricant Guangdong Kexin Industrial 
Logo Guangdong Kexin Industrial 





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KRF7501 fiche technique
SMD Type
HEXFET Power MOSFET
KRF7501
Features
Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V,Ta = 25
Continuous Drain Current, VGS @ 10V,TA = 70
Pulsed Drain Current*1
Power Dissipation Ta = 25 *1
Power Dissipation Ta = 70 *1
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp 10 s
Gate-to-Source Voltage
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* ISD 1.7A, di/dt 66A/ s, VDD V(BR)DSS,TJ
*2 Surface mounted on FR-4 board, t 10sec.
Symbol
VDS
ID
ID
IDM
PD
PD
VGSM
VGS
dv/dt
TJ, TSTG
R JA
150
Rating
20
2.4
1.9
19
1.25
0.8
0.01
16
12
5
-55 to + 150
100
Unit
A
A
W
W
W/
V
V
V/ns
/W
www.kexin.com.cn 1

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