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KODENSHI KOREA - Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS

Numéro de référence KK4012B
Description Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
Fabricant KODENSHI KOREA 
Logo KODENSHI KOREA 





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KK4012B fiche technique
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Dual 4-Input NAND Gate
High-Voltage Silicon-Gate CMOS
TECHNICAL DATA
KK4012B
The KK4012B NAND gates provide the system designer with direct
emplementation of the NAND function.
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1 µA at 18 V over full package-temperature
range; 100 nA at 18 V and 25°C
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
ORDERING INFORMATION
KK4012BN Plastic
KK4012BD SOIC
TA = -55° to 125° C for all packages
LOGIC DIAGRAM
PIN ASSIGNMENT
PINS 6, 8 = NO CONNECTION
PIN 14 =VCC
PIN 7 = GND
NC = NO CONNECTION
FUNCTION TABLE
Inputs
Output
A B CD
Y
L X XX
H
X L XX
H
X XLX
H
X XXL
H
H H HH
L
X = don’t care
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