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PDF NTLUS4195PZ Data sheet ( Hoja de datos )
| Número de pieza | NTLUS4195PZ | |
| Descripción | Single P-Channel 30 V MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTLUS4195PZwww.DataSheet4U.com
Power MOSFET
−30 V, −4.0 A, mCoolt Single P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
• Lowest RDS(on) in 1.6x1.6 Package
• ESD Protected
• This is a Halide Free Device
• This is a Pb−Free Device
Applications
• High Side Load Switch
• PA Switch and Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−30
±20
−3.0
−2.3
−4.0
1.5
Units
V
V
A
W
t ≤ 5 s TA = 25°C
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation (Note 2)
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage
Temperature
ID
PD
IDM
TJ,
TSTG
2.3
−2.0
−1.5
0.6
−17
-55 to
150
A
W
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS −1.0 A
TL 260 °C
Gate-to-Source ESD Rating
(HBM) per JESD22−A114F
ESD
Class 1B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
http://onsemi.com
V(BR)DSS
−30 V
MOSFET
RDS(on) MAX
90 mW @ −10 V
155 mW @ −4.5 V
ID MAX
−3.0 A
−2.0 A
S
G
D
P−Channel MOSFET
6 UDFN6
CASE 517AU
1 mCOOLt
MARKING
DIAGRAM
1
AC MG
G
AC = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
1
Publication Order Number:
NTLUS4195PZ/D
1 page  
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NTLUS4195PZ
TYPICAL CHARACTERISTICS
100
10 10 ms
1
VGS > 4.5 V
Single Pulse
0.1 TC = 25°C
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100 ms
1 ms
10 ms
dc
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
90
80
70
60
50 Duty Cycle = 0.5
40
30
20 0.2
10 0.1
0
1E−06
0.05 0.02 0.01
1E−05
1E−04
RqJA = 85°C/W
Single Pulse
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 14. FET Thermal Response
1E+01
1E+02
1E+03
DEVICE ORDERING INFORMATION
Device
Package
Shipping†
NTLUS4195PZTAG
UDFN6
(Pb−Free)
3000 / Tape & Reel
NTLUS4195PZTBG
UDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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