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DMN3410 fiches techniques PDF

Diodes - MOSFETs

Numéro de référence DMN3410
Description MOSFETs
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DMN3410 fiche technique
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DMN3410
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low Gate Threshold Voltage
· Ultra Low On-Resistance
· Low Input/Output Capacitance
· Low Input/Output Leakage
· Fast Switching Speed
Mechanical Data
· Case: SC-59, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: A2, See Page 5
· Weight: 0.008 grams (approx.)
· Ordering Information, See page 5
A
D
BC
G TOP VIEW S
G
H
K
J
DF
L
Drain
Gate
SC-59
Dim Min Max
A 0.35 0.50
B 1.50 1.70
C 2.70 3.00
D 0.95 nominal
G 1.90 nominal
M H 2.90 3.10
J 0.013 0.10
K 1.00 1.30
L 0.35 0.55
M 0.10 0.20
a 0° 8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Source
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 3)
TA = 25°C
TA = 70°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t £10s
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
Pd
RqJA
Tj, TSTG
Value
30
±12
4
3.4
15
1.3
90
-55 to +150
Units
V
V
A
A
W
°C/W
°C
Note:
1. Per mounting conditions described in Note 2.
2. The value of RqJA is measured with the device mounted on 1 in2 FR-4 PC board with 2 oz. Copper, in a still air environment at
TA = 25°C. The current rating is based on the t £10s Thermal Resistance rating.
3. Repetitive Rating, pulse width limited by junction temperature.
DS30375 Rev. 4 - 2
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DMN3410

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