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International Rectifier - 600V Discrete Hi-rel Igbt

Numéro de référence IRGMC40F
Description 600V Discrete Hi-rel Igbt
Fabricant International Rectifier 
Logo International Rectifier 





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IRGMC40F fiche technique
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PD -90716B
IRGMC40F
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• Switching-loss rating includes all "tail" losses
C
G
VCES = 600V
VCE(on) max = 2.0V
E
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
@VGE = 15V, IC = 20A
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
35*
20
152
152
± 20
125
50
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
*Current is limited by pin diameter
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
— — 1.0
— 0.21 —
— — 48
°C/W
For footnotes refer to the last page
www.irf.com
1
02/20/02

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