|
|
PDF EIC7785-5 Data sheet ( Hoja de datos )
| Número de pieza | EIC7785-5 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EIC7785-5 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
FEATURES
• 7.70–8.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +37.5 dBm Output Power at 1dB Compression
• 8.5 dB Power Gain at 1dB Compression
• 34% Power Added Efficiency
• -49 dBc IM3 at PO = 26.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Id1dB
IM3
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1600mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1600mA
f = 7.70-8.50GHz
Drain Current at 1dB Compression
f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 8.50GHz
Opt-01
Opt-02
Saturated Drain Current VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 30 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
36.5
7.5
-42
-46
TYP
37.5
8.5
34
1600
-45
-49
2900
-2.5
5.0
MAX
±0.6
1900
UNITS
dBm
dB
dB
%
mA
dBc
3500
-4.0
5.5
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf
Forward Gate Current
68mA
Igr
Reverse Gate Current
-13.6mA
Pin
Input Power
37dBm
Tch Channel Temperature 175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation 27W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
20.4mA
-3.4mA
@ 3dB Compression
175C
-65C to +175C
27W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EIC7785-5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EIC7785-10 | Internally Matched Power FET | Excelics Semiconductor |
| EIC7785-4 | Internally Matched Power FET | Excelics Semiconductor |
| EIC7785-5 | Internally Matched Power FET | Excelics Semiconductor |
| EIC7785-8 | Internally Matched Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |