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Número de pieza | EIC5972-4 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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UPDATED 12/07/2007
EIC5972-4
5.90-7.20 GHz 4-Watt Internally Matched Power FET
FEATURES
• 5.90– 7.20GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.5 dBm Output Power at 1dB Compression
• 9.0 dB Power Gain at 1dB Compression
• 32% Power Added Efficiency
• -46 dBc IM3 at PO = 29.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 5.90-7.20GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 5.90-7.20GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 5.90-7.20GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 5.90-7.20GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 5.90-7.20GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 7.20GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 20 mA
Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level.
MIN
35.5
8.0
TYP
36.5
9.0
32
1200
MAX
±0.8
1400
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
2000
2500
mA
-2.5 -4.0
V
5.5 6.0 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS
VGS
Igsf
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
15
-5
43.2mA
Igsr
Reverse Gate Current
-7.2mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
35.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIC5972-4.PDF ] |
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