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Excelics Semiconductor - Internally Matched Power FET

Numéro de référence EIC5964-8
Description Internally Matched Power FET
Fabricant Excelics Semiconductor 
Logo Excelics Semiconductor 





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EIC5964-8 fiche technique
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EIC5964-8
5.90-6.40 GHz 8-Watt Internally-Matched Power FET
FEATURES
5.90 – 6.40 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
10.0 dB Power Gain at 1dB Compression
37% Power Added Efficiency
-46 dBc IM3 at Po = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC5964-8 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 5.90-6.40GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 5.90-6.40GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 5.90-6.40GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 5.90-6.40GHz
Id1dB
Drain Current at 1dB Compression f = 5.90-6.40GHz
Output 3rd Order Intermodulation Distortion
IM3 f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 6.40 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
9
-43
TYP
39.5
10
37
2200
-46
4000
-2.5
3.5
MAX
UNITS
dBm
dB
±0.6 dB
2600
%
mA
dBc
4500
-4.0
4.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2003

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