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PDF EIC3439-4 Data sheet ( Hoja de datos )
| Número de pieza | EIC3439-4 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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ISSUED DATED: 11/12/2007
EIC3439-4
3.40-3.90GHz 4-Watt Internally Matched Power FET
FEATURES
• 3.40–3.90GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.5 dBm Output Power at 1dB Compression
• 12.0 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• -46 dBc IM3 at PO = 25.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 3.40-3.90GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 3.40-3.90GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 3.40-3.90GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 3.40-3.90GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 3.40-3.90GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 3.90GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
35.5
11.0
-43
TYP
36.5
12.0
35
1200
-46
2000
-2.5
5.5
MAX
±0.6
1500
2500
-4.0
6.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS
VGS
Igsf
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
15V
-5V
48.0 mA
Igsr
Reverse Gate Current
-9.6 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
35.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
14.4 mA
-2.4 mA
@ 3dB Compression
175 oC
-65 to +175 oC
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2007
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