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PDF EIC1415A-4 Data sheet ( Hoja de datos )
| Número de pieza | EIC1415A-4 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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ISSUED 08/21/2007
EIC1415A-4
14.40-15.40GHz 4-Watt Internally Matched Power FET
FEATURES
• 14.40– 15.40GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.0 dBm Output Power at 1dB Compression
• 5.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• -43 dBc IM3 at Po = 25.0 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIC1415A-4
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.129
.094
.382
.045
.004 .070 ±.008
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 14.40-15.40GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 14.40-15.40GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 14.40-15.40GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 14.40-15.40GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 14.40-15.40GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 15.40GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
35.5
4.5
TYP
36.0
5.0
25
1100
MAX
±0.6
1400
UNITS
dBm
dB
dB
%
mA
-40 -43
dBc
2080
-2.5
5.5
2880
-4.0
6.0
mA
V
oC/W
ABSOLUTE MAXIMUM RATING
SYMBOLS
PARAMETERS
ABSOLUTE
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
Igf Forward Gate Current
-5V
48mA
Igr Reverse Gate Current
-7.2mA
Pin Input Power 35.5dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175C
-65C to +175C
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised September 2007
1 page | ||
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