|
|
Número de pieza | EIC1314-7 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EIC1314-7 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! www.DataSheet4U.com
ISSUED 11/13/2008
EIC1314-7
13.75-14.50 GHz 7-Watt Internally Matched Power FET
FEATURES
• 13.75– 14.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +38.5 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIC1314-7
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.129
.094
.382
.045
.004 .070 ±.008
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
IMD3
PAE
Id1dB
Output Power at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 2400mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 2400mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈2400mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 14.50 GHz
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2400mA
f = 13.75-14.50GHz
Drain Current at 1dB Compression
f = 13.75-14.50GHz
IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 38 mA
RTH Thermal Resistance3
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN TYP MAX UNITS
38 38.5
dBm
56
dB
±0.6 dB
-41 -45
dBc
25
2400
3000
4 6.5
-2.5 -4.0
2.6 3
3) Overall Rth depends on case mounting.
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
35dBm
175 oC
-65 to +175 oC
@ 3dB Compression
175 oC
-65 to +175 oC
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
50W
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
issued November 2008
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet EIC1314-7.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC1314-12 | Internally Matched Power FET | Excelics Semiconductor |
EIC1314-2 | Internally Matched Power FET | Excelics Semiconductor |
EIC1314-4 | Internally Matched Power FET | Excelics Semiconductor |
EIC1314-7 | Internally Matched Power FET | Excelics Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |