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PDF EIC1314-12 Data sheet ( Hoja de datos )
| Número de pieza | EIC1314-12 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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ISSUED 10/17/2008
EIC1314-12
13.75-14.50 GHz 12-Watt Internally Matched Power FET
FEATURES
• 13.75– 14.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +41 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 23% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC1314-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
∆G
IMD3
PAE
Id1dB
Output Power at 1dB Compression
VDS = 10 V, IDSQ ≈ 4200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 4200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈4200mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 29.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 14.50 GHz
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 4200mA
f = 13.75-14.50GHz
Drain Current at 1dB Compression
f = 13.75-14.50GHz
40.5
5
-42
41
6
-45
23
4200
±0.6
4800
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
8 10
VP Pinch-off Voltage
VDS = 3 V, IDS = 62 mA
-2.5 -4.0
RTH Thermal Resistance3
1.8 2.0
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
UNITS
dBm
dB
dB
dBc
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
15
10V
Vgs
Gate-Source Voltage
-5
-4V
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
38dBm
175 oC
-65 to +175 oC
@ 3dB Compression
175 oC
-65 to +175 oC
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
75W
75W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised October 2008
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