|
|
PDF EIC1212-4 Data sheet ( Hoja de datos )
| Número de pieza | EIC1212-4 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EIC1212-4 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
ISSUED DATE: 09/20//2007
EIC1212-4
12.20-12.70 GHz 4-Watt Internally Matched Power FET
FEATURES
• 12.20-12.70GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.5 dBm Output Power at 1dB Compression
• 6.5dB Power Gain at 1dB Compression
• 28% Power Added Efficiency
• -46 dBc IM3 at PO = 25.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 12.20-12.70GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 12.20-12.70GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 12.70GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
35.5
5.5
-43
TYP
36.5
6.5
28
1100
-46
2000
-2.5
5.5
MAX
±0.6
1300
2500
-4.0
6.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
15V
10V
Vgs
Gate-Source Voltage
-5V
-4V
Igsf Forward Gate Current
48mA
14.4mA
Igsr
Reverse Gate Current
-9.6mA
-2.4mA
Pin
Input Power
35.5dBm
@ 3dB Compression
Tch Channel Temperature
175C
175C
Tstg
Storage Temperature
-65C to +175C
-65C to +175C
Pt Total Power Dissipation 25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised October 2007
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EIC1212-4.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EIC1212-4 | Internally Matched Power FET | Excelics Semiconductor |
| EIC1212-8 | Internally Matched Power FET | Excelics Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |