BLS6G2731-120 Datasheet PDF - NXP Semiconductors
| Part Number | BLS6G2731-120 | |
| Description | LDMOS S-band Radar Power Transistor | |
| Manufacturers | NXP Semiconductors | |
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BLS6G2731-120;
BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 120
13.5 48
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %:
N Output power = 120 W
N Power gain = 13.5 dB
N Efficiency = 48 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.7 GHz to 3.1 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
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www.DNatXaSPheSete4Um.coicmonductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
15
Gp
(dB)
13
11
7.2 Graphs
(1)
(3)
(2)
001aaj091
15
Gp
(dB)
13
11
001aaj092
(1)
(3)
(2)
99
7
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 2. Power gain as a function of load power; typical
values
7
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 3. Power gain as a function of load power; typical
values
60
ηD
(%)
40
001aaj093
(1)
(2)
(3)
60
ηD
(%)
40
001aaj094
(1)
(2)
(3)
20 20
0
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 4. Drain efficiency as a function of load power;
typical values
0
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 5. Drain efficiency as a function of load power;
typical values
BLS6G2731-120_6G2731S-120_1
Product data sheet
Rev. 01 — 14 November 2008
© NXP B.V. 2008. All rights reserved.
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