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BLS6G2933S-130 fiches techniques PDF

NXP Semiconductors - LDMOS S-band radar power transistor

Numéro de référence BLS6G2933S-130
Description LDMOS S-band radar power transistor
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BLS6G2933S-130 fiche technique
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BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 01 — 11 December 2008
Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.9 to 3.3 32 130
12.5 47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %:
N Output power = 130 W
N Power gain = 12.5 dB
N Efficiency = 47 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.9 GHz to 3.3 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

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