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PDF BLF6G22-180RN Data sheet ( Hoja de datos )
| Número de pieza | BLF6G22-180RN | |
| Descripción | Power LDMOS Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp ηD IMD3
(MHz)
(V) (W) (dB) (%) (dBc)
2-carrier W-CDMA
2110 to 2170 30 40
16.0 25
−38[1]
ACPR
(dBc)
−42[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 30 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 16.0 dB
N Efficiency = 25 %
N IMD3 = −38 dBc
N ACPR = −42 dBc
I Easy power control
I Integrated ESD protection
I Enhanced ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2000 MHz to 2200 MHz)
I Internally matched for ease of use
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NXP Semiconductors
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BLF6G22(LS)-180RN
Power LDMOS transistor
7.4 2-carrier W-CDMA
17
Gp
(dB)
16
15
001aai644
60
ηD
(%)
−30
IMD3
ACPR
(dBc)
−35
Gp
40
−40
ηD −45
20
−50
001aai645
IMD3
ACPR
14
0
0
20 40 60
PL(AV) (W)
Fig 4.
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz);
carrier spacing 10 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
−55
0
20 40 60
PL(AV) (W)
Fig 5.
VDS = 30 V; IDq = 1400 mA; f = 2140 MHz (±5 MHz);
carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
8. Test information
VGG
C7
R2
C8 C6
C5
C4
R1
C1
input
C3
C2
VDD
C20
C13 C14 C15 C16
C9
C10
C11 output
The drawing is not to scale.
Fig 6. Test circuit for operation at 2200 MHz
BLF6G22-180RN_22LS-180RN_1
Product data sheet
Rev. 01 — 20 November 2008
C12 C17 C18 C19
001aai646
© NXP B.V. 2008. All rights reserved.
5 of 11
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NXP Semiconductors
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14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF6G22(LS)-180RN
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 November 2008
Document identifier: BLF6G22-180RN_22LS-180RN_1
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