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PDF BLF6G10S-45 Data sheet ( Hoja de datos )
| Número de pieza | BLF6G10S-45 | |
| Descripción | Power LDMOS Transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G10S-45
Power LDMOS transistor
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 800 MHz
to 1000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
920 to 960
28 1.0 23 8
ACPR
(dBc)
−48.5[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 28 V and an IDq of 350 mA:
N Average output power = 1.0 W
N Gain = 23 dB
N Efficiency = 8 %
N ACPR = −48.5 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1 page  
www.DNatXaSPheSete4Um.coicmonductors
BLF6G10S-45
Power LDMOS transistor
25
Gp
(dB)
23
21
19
(1) Gp
(2)
ηD
001aaf994
16
ηD
(%)
(1) (2)
12
8
4
−40
ACPR
(dBc)
−45
−50
−55
(1)
(2)
001aaf997
17 0
20 24 28 32 36
PL(AV) (dBm)
VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz;
f2 = 957.5 MHz; carrier spacing 5 MHz.
(1) f = 955 MHz
(2) f = 925 MHz
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
−60
20 24 28 32 36
PL(AV) (dBm)
VDS = 28 V; IDq = 350 mA; carrier spacing 5 MHz.
(1) f = 955 MHz
(2) f = 925 MHz
Fig 5. 2-carrier W-CDMA adjacent channel power ratio
as function of average load power; typical
values
8. Test information
input
50 Ω
VGS
C10
C8
C1
C2
C11
C9
R1
C3
C4
C12
R3
C15
C13 C14
R2
F1
C7
C6 C5
VDS
C16
output
50 Ω
001aaf995
Fig 6. Test circuit for operation at 900 MHz
BLF6G10S-45_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
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