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PDF BLF6G10LS-200 Data sheet ( Hoja de datos )

Número de pieza BLF6G10LS-200
Descripción Power LDMOS transistor
Fabricantes NXP Semiconductors　
Logotipo NXP Semiconductors Logotipo



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BLF6G10LS-200
Power LDMOS transistor
Rev. 01 — 18 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 40
20 27
ACPR
(dBc)
−41[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an IDq of 1400 mA:
N Average output power = 40 W
N Power gain = 20 dB
N Efficiency = 27 %
N ACPR = −41 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (800 MHz to 1000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

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BLF6G10LS-200 pdf
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BLF6G10LS-200
Power LDMOS transistor
0
IMD
(dBc)
−20
001aah535
IMD3
0
IMD3
(dBc)
−20
001aah536
IMD5
−40 −40
IMD7
−60
−80
0
50 100 150 200 250 300 350
PL(PEP) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz;
f2 = 894.05 MHz.
Fig 3. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
−60
−80
0
(5)
(4)
(1)
(3)
(2)
50 100 150 200 250 300 350
PL(PEP) (W)
VDS = 28 V; f1 = 893.95 MHz; f2 = 894.05 MHz.
(1) 1300 MHz
(2) 1350 MHz
(3) 1400 MHz
(4) 1450 MHz
(5) 1500 MHz
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
7.4 2-carrier W-CDMA
22
Gp
(dB)
21
20
19
18
Gp
ηD
001aah537
50
ηD
(%)
40
30
20
10
0
ACPR
(dBc)
−20
−40
−60
001aah538
17
0
0
20 40 60
PL(AV) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz;
f2 = 891.5 MHz; carrier spacing 5 MHz.
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
−80
0
10 20 30 40 50 60 70
PL(AV) (W)
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz;
f2 = 891.5 MHz; carrier spacing 5 MHz.
Fig 6. 2-carrier W-CDMA adjacent channel power ratio
as function of average load power; typical
values
BLF6G10LS-200_1
Preliminary data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
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14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF6G10LS-200
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 January 2008
Document identifier: BLF6G10LS-200_1

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