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PDF HI882 Data sheet ( Hoja de datos )
| Número de pieza | HI882 | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
| Logotipo |  |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9014
Issued Date : 1996.04.12
Revised Date : 2001.01.25
Page No. : 1/4
HI882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI882 is designed for using in output stage of 10 W audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 30 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) ...................................................................................................... 3 A
IC Collector Current (Pulse) .................................................................................................. 7 A
IB Base Current (DC) ..................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
0.3
1
-
-
90
45
Classification Of hFE1
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
100-200
P
160-320
E
250-500
HI882
HSMC Product Specification
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HI882.PDF ] | |
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