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PDF HMC504LC4B Data sheet ( Hoja de datos )
| Número de pieza | HMC504LC4B | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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8
Typical Applications
This HMC504LC4B is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC504LC4B
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Features
Noise Figure: 2 dB @ 20 GHz
Gain: 19 dB
P1dB Output Power: +17 dBm
Supply Voltage: +4V @ 90 mA
Output IP3: +26 dBm
50 Ohm matched Input/Output
24 Lead Ceramic 4x4mm SMT Package: 16mm2
General Description
The HMC504LC4B is a GaAs MMIC Low Noise
Wideband Amplifier housed in a leadless 4 x 4 mm
ceramic surface mount package. The amplifier
operates between 14 and 27 GHz, providing up
to 19 dB of small signal gain, 2.2 dB noise figure,
and output IP3 of +26 dBm, while requiring only 90
mA from a +4V supply. The P1dB output power of
up to +17 dBm enables the LNA to function as a LO
driver for balanced, I/Q or image reject mixers. The
HMC504LC4B also features I/Os that are DC blocked
and internally matched to 50 Ohms, making it ideal for
high capacity microwave radios or VSAT applications.
This versatile LNA is also available in die form as the
HMC-ALH476.
8 - 132
Electrical Specifications, TA = +25° C, Vdd= +4V, Idd = 90 mA[2]
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range
14 - 20
20 - 24
Gain [1]
16.5
19
16 18.5
Gain Variation over Temperature
0.015
0.017
Noise Figure [1]
2.2 3
2.5 4.2
Input Return Loss
15 9
Output Return Loss
15 12
Output Power for 1 dB Compression [1]
15
16.5
Saturated Output Power (Psat) [1]
19.5
19.5
Output Third Order Intercept (IP3)
24.5
25.5
Supply Current (Idd)
(Vdd = 4V, Vgg = -0.3V Typ.)
90
90
[1] Board loss subtracted out for gain, power and noise figure measurement
[2] Adjust Vgg between -1 to 0.3V to achieve Idd = 90mA
Min.
14
Typ.
24 - 27
17
0.018
4.5
7
9.5
17
19
26
90
Max.
6
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
8
v00.1108
HMC504LC4B
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 - 27 GHz
Pin Descriptions
Pin Number
Function
1 - 3, 5 - 8, 11 - 16,
18, 19, 24
GND
4 RFIN
17 RFOUT
Description
Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
This pad is AC coupled and matched to
50 Ohms.
This pad is AC coupled and matched to
50 Ohms.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
20 Vgg ing Procedure” application note. See assembly for required
external components.
Interface Schematic
21
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
Application Circuit
Component
C1, C2
C3, C4
C5, C6
Value
100 pF
10,000 pF
4.7 μF
8 - 136
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC504LC4B.PDF ] | |
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