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PDF HMC635 Data sheet ( Hoja de datos )
| Número de pieza | HMC635 | |
| Descripción | GaAs PHEMT MMIC DRIVER | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC635 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v00.1107
Typical Applications
2 The HMC635 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• LO Driver for Mixers
• Military & Space
Functional Diagram
HMC635
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
Features
Gain: 19.5 dB
P1dB: +23 dBm
Output IP3: +29 dBm
Saturated Power: +24 dBm @ 15% PAE
Supply Voltage: +5V @ 280 mA
50 Ohm Matched Input/Output
Die Size: 1.95 x 0.84 x 0.10 mm
General Description
The HMC635 is a GaAs PHEMT MMIC Driver
Amplifier die which operates between 18 and 40 GHz.
The amplifier provides 19.5 dB of gain, +29 dBm
Output IP3, and +23 dBm of output power at 1 dB
gain compression, while requiring 280 mA from a +5V
supply. Ideal as a driver amplifier for microwave radio
applications, or as an LO driver for mixers operating
between 18 and 40 GHz, the HMC635 is capable of
providing up to +24 dBm of saturated output power at
15% PAE. The amplifier’s I/Os are DC blocked and
internally matched to 50 Ohms making it ideal for
integration into Multi-Chip-Modules (MCMs). All data
is taken with die connected at input and output RF
ports via two 1 mil wedge bonds of 500μm length.
2 - 58
Electrical Specifications, TA = +25° C, Vdd1, 2, 3, 4 = +5V, Idd= 280mA [1]
Parameter
Min. Typ. Max. Min. Typ.
Frequency Range
18 - 36
36 - 40
Gain
16 19.5
16 19
Gain Variation Over Temperature
0.045 0.060
0.045
Input Return Loss
15 9
Output Return Loss
13 12
Output Power for 1 dB Compression (P1dB)
19 23
14 19
Saturated Output Power (Psat)
24 20
Output Third Order Intercept (IP3)
24 29
21 27
Noise Figure
87
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
280 280
[1]Adjust Vgg1 = Vgg2 between -2 to 0V to achieve Idd= 280 mA Typical.
Max.
0.050
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.1107
Outline Drawing
2
HMC635
GaAs PHEMT MMIC DRIVER
AMPLIFIER, 18 - 40 GHz
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
2 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC635.PDF ] | |
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