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PDF HMC818LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC818LP4E | |
| Descripción | Dual Channel Low Noise Amplifier | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.1108
8
Typical Applications
The HMC818LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radios
Functional Diagram
HMC818LP4E
GaAs SMT PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Low Noise Figure: 0.85 dB
High Gain: 20.5 dB
High OIP3: +35 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16mm2
General Description
The HMC818LP4E is a GaAs PHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.7 - 2.2 GHz. The amplifier has
been optimized to provide 0.85 dB noise figure,
20.5 dB gain and +35 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC818LP4E can be biased with +3V to +5V and
features an externally adjustable supply current which
allows the designer to tailor the linearity performance
of each channel of the LNA for a specific application.
8 - 402
Electrical Specifications,
TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4
Parameter
Vdd = 3V
Vdd = 5V
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range
1700 - 2000
2000 - 2200
1700 - 2000
2000 - 2200
Gain
15 18
14 16.5
17 20.5
15.5 17.5
Gain Variation Over Temperature
0.010
0.008
0.015
0.012
Noise Figure
0.95 1.2
0.95 1.2
0.85 1.1
0.85 1.1
Input Return Loss
18 17 21 18
Output Return Loss
16 15 15 13
Output Power for 1 dB
Compression (P1dB)
14 15 19 21
Saturated Output Power (Psat)
15
16
20 21.5
Output Third Order Intercept (IP3)
24.5
25
33
35
Supply Current (Idd)
30 42 55 30 42 55 78 112 146 78 112 146
* Rbias resistor sets current, see application circuit herein
Units
MHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.1108
HMC818LP4E
GaAs SMT PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
8
Output IP3 vs. Rbias @ 1700 MHz [1]
36
34
32
30
28
26
24
22
100
1000
Rbias (Ohms)
10000
Gain, Noise Figure & Rbias @ 1700 MHz [1]
24 2
23 1.8
22 1.6
21 1.4
20 1.2
19 1
18 0.8
17 0.6
16
100
1000
Rbias(Ohms)
0.4
10000
Output IP3 vs. Rbias @ 2100 MHz [1]
38 140
36 120
34 100
32 80
30 60
28 40
26 20
24
100
1000
Rbias (Ohms)
0
10000
Gain, Noise Figure & Rbias @ 2100 MHz [1]
21 1.4
20
19 1.2
18
17 1
16
15 0.8
14
13
100
1000
Rbias(Ohms)
0.6
10000
Cross Channel Isolation [1]
0
-10 RF1 TO RF2 AT IFI
RF2 TO RF1 AT IF2
-20
-30
-40
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Magnitude Balance [1]
1
0.5
0
-0.5
-1
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
8 - 406
[1] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC818LP4E.PDF ] | |
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