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PDF HMC816LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC816LP4E | |
| Descripción | Dual Channel Low Noise Amplifier | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v00.1108
8
Typical Applications
The HMC816LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Multi-Channel Applications
Functional Diagram
HMC816LP4E
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Features
Low Noise Figure: 0.5 dB
High Gain: 22 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
General Description
The HMC816LP4E is a GaAs PHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 230 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC816LP4E shares
the same package and pinout with the HMC817-
LP4E & HMC818LP4E LNAs. The HMC817LP4E can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
8 - 362
Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
Parameter
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
Frequency Range
230 - 450
450 - 660
Gain
17 21
14 17
Gain Variation Over Temperature
0.001
0.002
Noise Figure
0.5 0.9
0.5 0.9
Input Return Loss
13 17
Output Return Loss
12 10
Output Power for 1 dB
Compression (P1dB)
10 14
13 16
Saturated Output Power (Psat)
10 15
14 16.5
Output Third Order Intercept (IP3)
26
28
Supply Current (Idd)
24 34 44 24 34 44
* Rbias sets current, see application circuit herein
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
230 - 450
450 - 660
19 22
15 19
0.005
0.007
0.5 0.9
0.5 0.9
15 16
13 10
Units
MHz
dB
dB/ °C
dB
dB
dB
15 19
18 21
dBm
16 20
18 21
dBm
34 37 dBm
68 97 126 68 97 126 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.1108
HMC816LP4E
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
8
Output IP3 vs. Rbias @ 400 MHz
40
38
36
34
32
30
28
26
Vdd= 3V
24 Vdd= 5V
22
500
1000
Rbias (Ohms)
10000
Output IP3 vs. Rbias @ 500 MHz
40
38
36
34
32
30
28
26
Vdd= 3V
24 Vdd= 5V
22
500
1000
Rbias (Ohms)
10000
Cross Channel Isolation [1]
0
-10 RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
-20
-30
-40
0.2
0.3 0.4 0.5 0.6
FREQUENCY (GHz)
0.7
Phase Balance [1]
2
1
0
-1
-2
0.2
0.3 0.4 0.5 0.6
FREQUENCY (GHz)
0.7
Magnitude Balance [1]
1
0.5
0
-0.5
-1
0.2
0.3 0.4 0.5 0.6
FREQUENCY (GHz)
0.7
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Vdd (V)
Min
Rbias Ω
Idd (mA)
Max Recommended
Open
3V 4.7k circuit 10k
34
820 65
5V
0
Open
circuit
2k
3.92k
80
90
10k 97
With Vdd = 3V Rbias <4.7k is not recommended and may result in
LNA becoming conditionally unstable.
8 - 366
[1] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC816LP4E.PDF ] | |
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