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PDF HMC566LP4E Data sheet ( Hoja de datos )
| Número de pieza | HMC566LP4E | |
| Descripción | Low Noise Amplifier SMT | |
| Fabricantes | Hittite Microwave Corporation | |
| Logotipo |  |
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v02.0609
8
Typical Applications
The HMC566LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Functional Diagram
HMC566LP4E
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
Features
Low Noise Figure: 2.8 dB
High Gain: 21 dB
High OIP3: +24 dBm
Single Positive Supply: +3V @ 82 mA
50 Ohm Matched & DC Blocked I/Os
24 Lead 4x4mm QFN Package: 16mm2
General Description
The HMC566LP4E is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifier (LNA) in a
4x4 mm SMT package which operates from 28 to
36 GHz. The HMC566LP4E provides 21 dB of small
signal gain, 2.8 dB of noise figure and output IP3 of
24 dBm. This self-biased LNA is ideal for hybrid and
MCM assemblies due to its compact size, single
+3V supply operation, and DC blocked RF I/O’s.
The RoHS packaged HMC566LP4E eliminates the
need for wirebonding and allows the use of high
volume surface mount manufacturing techniques.
The HMC566LP4E is also available in chip form as
the HMC566.
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3, 4 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd1+Idd2+Idd3+Idd4)
Min.
18
50
Typ.
28 - 31.5
21
0.03
2.8
14
8
11
13
23.5
82
Max.
3.6
106
Min. Typ. Max.
31.5 - 33.5
19.5 22.5
0.03
2.8 3.6
18
10
12
14
24.5
50 82 106
Min.
18
50
Typ.
33.5 - 36
21
0.03
3.3
12
7
11
13
24.5
82
Max.
4.3
106
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 190
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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8
Outline Drawing
v02.0609
HMC566LP4E
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
HMC566LP4E
RoHS-compliant Low Stress Injection Molded Plastic
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
Lead Finish
100% matte Sn [2]
Package Marking [1]
H566
XXXX
8 - 194
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC566LP4E.PDF ] | |
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