DataSheetWiki


2SC6146 fiches techniques PDF

Sanyo Semicon Device - NPN Triple Diffused Planar Silicon Transistor

Numéro de référence 2SC6146
Description NPN Triple Diffused Planar Silicon Transistor
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SC6146 fiche technique
Ordering number : ENA1160
www.DataSheet4U.com
2SC6146
SANYO Semiconductors
DATA SHEET
2SC6146
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
High breakdown voltage.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW300μs, duty cycle10%
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
hFE3
Conditions
VCB=400V, IE=0A
VEB=5V, IC=0A
VCE=5V, IC=0.1A
VCE=5V, IC=0.5A
VCE=5V, IC=1mA
Ratings
800
800
350
8
1
2
0.5
1
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
°C
°C
min
100
10
20
Ratings
typ
max
10
10
200
Unit
μA
μA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
O2208CB MS IM TC-00001663 No. A1160-1/4

PagesPages 4
Télécharger [ 2SC6146 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC6140 Transistor Silicon NPN Epitaxial Type Toshiba
Toshiba
2SC6141 AF100W Output Applications Sanyo Semicon Device
Sanyo Semicon Device
2SC6142 High Voltage Switching Applications Toshiba
Toshiba
2SC6144 NPN Epitaxial Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche