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NXP Semiconductors - Low Capacitance Unidirectional ESD Protection Diodes

Numéro de référence PESD3V3L1UL
Description Low Capacitance Unidirectional ESD Protection Diodes
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PESD3V3L1UL fiche technique
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PESD3V3L1UA; PESD3V3L1UB;
PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 17 June 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from
the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3L1UA
SOD323
PESD3V3L1UB
SOD523
PESD3V3L1UL
SOD882
JEITA
SC-76
SC-79
-
Package configuration
very small
ultra small and flat lead
leadless ultra small
1.2 Features
I Unidirectional ESD protection of
one line
I Low diode capacitance: Cd = 34 pF
I Low clamping voltage: VCL = 11 V
I Very low leakage current: IRM = 100 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Subscriber Identity Module (SIM) card
protection
I Portable electronics
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Cd diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 3.3 V
- 34 40 pF

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