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Número de pieza | IRHLG77110 | |
Descripción | 100V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD-97178
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG77110 100K Rads (Si)
IRHLG73110 300K Rads (Si)
RDS(on)
0.22Ω
0.22Ω
ID
1.8A
1.8A
2N7612M1
IRHLG77110
100V, Quad N-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 4.5V, TC=25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
1.8
1.1
7.2
1.4
0.01
±10
97
1.8
0.14
11
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
03/20/08
1 page www.DataSheet4U.com
Pre-Irradiation
IRHLG77110, 2N7612M1
0.5
ID = 1.8A
0.4
TJ = 150°C
0.3
0.2 TJ = 25°C
0.1
0 1 2 3 4 5 6 7 8 9 10 11
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
0.4
0.35
0.3
TJ = 150°C
0.25
0.2 TJ = 25°C
0.15
Vgs = 4.5V
0.1
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
ID, Drain Current (A)
Fig 6. Typical On-Resistance Vs
Drain Current
130
ID = 1.0mA
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRHLG77110.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHLG77110 | 100V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET | International Rectifier |
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