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PDF IRHLG7970Z4 Data sheet ( Hoja de datos )
| Número de pieza | IRHLG7970Z4 | |
| Descripción | 60V 100kRad Hi-Rel Quad P-Channel TID Hardened MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97200B
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLG7970Z4 100K Rads (Si) 1.25Ω -0.71A
IRHLG7930Z4 300K Rads (Si) 1.25Ω -0.71A
2N7628M1
IRHLG7970Z4
60V, Quad P-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n Complimentary N-Channel Available -
IRHLG770Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -4.5V, TC=25°C
ID @ VGS = -4.5V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-0.71
-0.45
A
-2.84
1.0 W
0.01
W/°C
±10 V
21 mJ
-0.71
A
0.1 mJ
-14 V/ns
-55 to 150
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/01/08
1 page  
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Pre-Irradiation
IRHLG7970Z4, 2N7628M1
4.0
3.5 ID = -0.71A
3.0
2.5
2.0
TJ = 150°C
1.5
1.0
0.5 TJ = 25°C
0
2 3 4 5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
TJ = 150°C
TJ = 25°C
Vgs = -4.5V
0.5 1.0 1.5 2.0
-ID, Drain Current (A)
2.5
3.0
Fig 6. Typical On-Resistance Vs
Drain Current
75
ID = -1.0mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
3.0
2.5
2.0
1.5
1.0 ID = -50µA
ID = -250µA
0.5 ID = -1.0mA
ID = -150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRHLG7970Z4.PDF ] | |
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