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PDF IRHLG7670Z4 Data sheet ( Hoja de datos )
| Número de pieza | IRHLG7670Z4 | |
| Descripción | 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97191B
2N7635M1
IRHLG7670Z4
RADIATION HARDENED 60V, Combination 2N-2P-CHANNEL
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHLG7670Z4 100K Rads (Si)
IRHLG7630Z4 300K Rads (Si)
RDS(on)
0.6Ω
1.25Ω
0.6Ω
1.25Ω
ID
1.07A
-0.71A
1.07A
-0.71A
CHANNEL
N
P
N
P
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Pre-Irradiation
N-Channel
P-Channel Units
1.07
0.67
-0.71
-0.45
A
4.28
-2.84
1.0 1.0 W
0.01
0.01
W/°C
±10 ±10 V
13 Á
21 ²
mJ
1.07
-0.71
A
0.1 0.1 mJ
7.0 Â
-14 ³
V/ns
-55 to 150
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/01/08
1 page  
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PRraed-IirartaiodniaCtiohnaracteristics
IRHLG7670Z4, 2N7635M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (MO-036)
Up to 300K Rads (Si)1
Min Max
-60 —
-1.0 -2.0
— -100
— 100
— -1.0
— 1.20
— 1.25
Units
V
nA
µA
Ω
Ω
Test Conditions
VGS = 0V, ID = -250µA
VGS = VDS, ID = -250µA
VGS = -10V
VGS = 10V
VDS= -48V, VGS= 0V
VGS = -4.5V, ID = -0.45A
VGS = -4.5V, ID = -0.45A
VSD Diode Forward Voltage
— -5.0
V
VGS = 0V, ID = -0.71A
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V 2V 4V 5V 6V 7V 8V 10V
Br 37
I 60
Au 84
305 39 -60 -60 -60 -60 -60 -50 -35 -25
370 34 -60 -60 -60 -60 -60 -20
-
-
390 30 -60 -60 -60 -60
-
-
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 1 2 3 4 5 6 7 8 9 10
VGS
Br
I
Au
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
5
5 Page 
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Pre-Irradiation
10
VGS
TOP
-10V
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
BOTTOM -2..0V
1
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
10
VGS
TOP
-10V
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
BOTTOM -2..0V
1
-2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1 10
-VDS , Drain-to-Source Voltage (V)
100
-2.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1 10
-VDS , Drain-to-Source Voltage (V)
100
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
10
TJ = 25°C
TJ = 150°C
1
0.1
2
VDS = -25V
20µs PULSE WIDTH
2.5 3
-VGS, Gate-to-Source Voltage (V)
3.5
Fig 21. Typical Transfer Characteristics
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2.0
ID = -0.71A
1.5
1.0
VGS = -4.5V
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 22. Normalized On-Resistance
Vs. Temperature
11
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| PDF Descargar | [ Datasheet IRHLG7670Z4.PDF ] | |
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