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PDF BLF6G20-180PN Data sheet ( Hoja de datos )
| Número de pieza | BLF6G20-180PN | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF6G20-180PN
Power LDMOS transistor
Rev. 03 — 30 March 2009
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS
PL(AV)
Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
32
50
18
29.5
ACPR
(dBc)
−35[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an IDq of 1600 mA:
N Average output power = 50 W
N Power gain = 18 dB (typ)
N Efficiency = 29.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Qualified up to a supply voltage of 32 V
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page  
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BLF6G20-180PN
Power LDMOS transistor
22
Gp
(dB)
20
18
16
Gp
ηD
001aai020 40
ηD
(%)
30
20
10
−20
ACPR
(dBc)
−30
−40
−50
001aai021
14
0
0
20 40 60
PL (W)
Fig 4.
VDS = 32 V; IDq = 1600 mA; f1 = 1872.5 MHz;
f2 = 1877.5 MHz; carrier spacing 5 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of load power; typical
values
−60
0
20 40 60
PL (W)
Fig 5.
VDS = 32 V; IDq = 1600 mA; f1 = 1872.5 MHz;
f2 = 1877.5 MHz; carrier spacing 5 MHz.
2-carrier W-CDMA adjacent channel power
ratio as a function of load power; typical
values
22
Gp
(dB)
20
18
16
Gp
ηD
001aai022
40
ηD
(%)
30
20
10
−20
ACPR,
IMD3
(dBc)
−30
−40
−50
001aai023
IMD3
ACPR
14
0
0
20 40 60
PL (W)
Fig 6.
VDS = 32 V; IDq = 1600 mA; f1 = 1867.5 MHz;
f2 = 1877.5 MHz; carrier spacing 10 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of load power; typical
values
−60
0
20 40 60
PL (W)
Fig 7.
VDS = 32 V; IDq = 1600 mA; f1 = 1867.5 MHz;
f2 = 1877.5 MHz; carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of load power; typical values
BLF6G20-180PN_3
Product data sheet
Rev. 03 — 30 March 2009
© NXP B.V. 2009. All rights reserved.
5 of 11
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14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLF6G20-180PN
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 March 2009
Document identifier: BLF6G20-180PN_3
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