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Número de pieza | BLF6G20-110 | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Rev. 01 — 28 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp
ηD IMD3
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1930 to 1990
28 25
19 31 −37[1]
ACPR
(dBc)
−40[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an IDq of 900 mA:
N Average output power = 25 W
N Power gain = 19 dB
N Efficiency = 31 %
N IMD3 = −37 dBc
N ACPR = −40 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1 page www.DNatXaSPheSete4Um.coicmonductors
9. Package outline
BLF6G20-110; BLF6G20LS-110
Power LDMOS transistor
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
q
1
B
C
L
c
H U2
A
2
b
p E1
w1 M A M B M
w2 M C M
Q
E
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A
b
c
D D1 E E1 F
H
L
p
Q q U1 U2 w1
mm
4.72 12.83 0.15 20.02 19.96 9.50
3.43 12.57 0.08 19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
3.38
3.12
1.70
1.45
27.94 34.16
33.91
9.91
9.65
0.25
inches
0.186
0.135
0.505
0.495
0.006
0.003
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045
0.035
0.785
0.745
0.210
0.170
0.133
0.123
0.067
0.057
1.100
1.345
1.335
0.390
0.380
0.01
w2
0.51
0.02
OUTLINE
VERSION
SOT502A
IEC
REFERENCES
JEDEC
JEITA
Fig 2. Package outline SOT502A
BLF6G20-110_BLF6G20LS-110_1
Preliminary data sheet
Rev. 01 — 28 January 2008
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
© NXP B.V. 2008. All rights reserved.
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