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PDF HMC693 Data sheet ( Hoja de datos )

Número de pieza HMC693
Descripción 1 Watt Power Amplifier Chip
Fabricantes Hittite Microwave Corporation 
Logotipo Hittite Microwave Corporation Logotipo



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No Preview Available ! HMC693 Hoja de datos, Descripción, Manual

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v03.1108
Typical Applications
The HMC693 is ideal for:
• Point-to-Point Radios
3 • Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC693
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 27 - 34 GHz
Features
Saturated Output Power: +30 dBm @ 23% PAE
Output IP3: +37 dBm
Gain: 17.5 dB
DC Supply: +5V @ 800 mA
50 Ohm Matched Input/Output
Die Size: 2.53 x 2.43 x 0.1 mm
General Description
The HMC693 is a two stage GaAs PHEMT MMIC
1 Watt Power Amplifier which operates between
27 and 34 GHz. The HMC693 provides 17.5 dB of
gain, and +30 dBm of saturated output power at
23% PAE from a +5V supply. The RF I/Os are
DC blocked and matched to 50 Ohms for ease of
integration into Multi-Chip-Modules (MCMs). All data
is taken with the chip in a 50 Ohm test fixture
connected via 0.025 mm (1 mil) diameter wire bonds
of length 0.31 mm (12 mils).
3 - 146
Electrical Specifications, TA = +25° C,
Vdd = Vdd1-3t = Vdd1-3b = +5V, Idd = 800 mA, Vgg = Vgg1-3t = Vgg1-3b [1]
Parameter
Min. Typ. Max.
Frequency Range
27 - 29.5
Gain
16 18.5
Gain Variation Over Temperature
0.023
Input Return Loss
17
Output Return Loss
34
Output Power for 1 dB
Compression (P1dB)
27 30
Saturated Output Power (Psat)
30.8
Output Third Order Intercept (IP3)[2]
38
Total Supply Current (Idd)
800 1100
[1] Adjust Vgg between -2 to 0V to achieve Idd= 800 mA typical.
[2] Measurement taken at 5V @ 800 mA, Pin / Tone = +10 dBm
Min.
15
Typ.
29.5 - 31.4
17.5
0.014
17
24
Max.
27 30
31
38
800 1100
Min.
14
Typ.
31.4 - 34
16.5
0.016
14
19
Max.
27 29
29.6
37
800
1100
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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HMC693 pdf
www.DataSheet4U.com
v03.1108
Outline Drawing
3
HMC693
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 27 - 34 GHz
Die Packaging Information [1]
Standard
Alternate
GP-1
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
3 - 150
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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