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PDF HMC669LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC669LP3E | |
| Descripción | SMT LNA W/ Failsafe Bypass Mode | |
| Fabricantes | Hittite Microwave Corporation | |
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HMC669LP3 / 669LP3E
v02.0808
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 1700 - 2200 MHz
5
Typical Applications
The HMC669LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Tower Mounted Amplifiers
• Test & Measurement Equipment
Features
Noise Figure: 1.4 dB
Output IP3: +29 dBm
Gain: 17 dB
Failsafe Operation:
Bypass is enabled when LNA is unpowered
Single Supply: +3V or +5V
16 Lead 3x3mm QFN Package: 9 mm2
Functional Diagram
General Description
The HMC669LP3(E) is a versatile, high dynamic range
GaAs MMIC Low Noise Amplifier that integrates a
low loss LNA bypass mode on the IC. The amplifier
is ideal for receivers and LNA modules operating be-
tween 1.7 and 2.2 GHz and provides 1.4 dB noise
figure, 17 dB of gain and +29 dBm IP3 from a single
supply of +5V @ 86mA. Input and output return losses
are excellent and no external matching components
are required. A single control line is used to switch
between LNA mode and a low loss bypass mode.
Failsafe topology also enables the LNA bidirectional
bypass path when no DC power is available.
5 - 284
Electrical Specifications, TA = +25° C, Rbias = 15 Ohm
Parameter
LNA Mode
Vdd = +3V
Vdd = +5V
Bypass Mode
Failsafe Mode
Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Frequency Range
1.7 - 2.2
1.7 - 2.2
1.7 - 2.2
1.7 - 2.2
GHz
Gain
12 15
14 17
-3 -2.1
-3 -2.1
dB
Gain Variation Over Temperature
0.015
0.014
0.0008
0.0008
dB / °C
Noise Figure
1.4 1.65
1.4 1.65
dB
Input Return Loss
10 11 12 12 dB
Output Return Loss
13 13 12 12 dB
Reverse Isolation
28 30
-
- dB
Power for 1dB Compression
(P1dB)[1]
11.5 12 21 24 dBm
Third Order Intercept (IP3)[2]
25
29
25
25 dBm
Supply Current (Idd)
49 59
86 105
0.04
- mA
Switching Speed
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
100
100
80
- ns
ns
[1] P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass and Failsafe Modes are referenced to RFIN.
[2] IP3 for LNA Mode is referenced to RFOUT while IP3 for Bypass and Failsafe Modes are referenced to RFIN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
www.DataSheet4U.com
HMC669LP3 / 669LP3E
v02.0808
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 1700 - 2200 MHz
5 Failsafe Mode -
Broadband Gain & Return Loss
0
-2
-4
-6 S21
S11
-8 S22
-10
-12
-14
-16
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
Failsafe Mode -
Input IP3 vs. Output Power @ 1900 MHz
40
35
+25C
+85C
-40C
30
25
20
15
-10
-5
05
Pout (dBm)
10 15
Failsafe Mode - Input IP3 vs.
Temperature, Output Power @ 5 dBm
32
+25C
28
+85C
-40C
24
20
16
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Failsafe Mode -
Insertion Loss vs. Temperature
0
-1
+25C
+85C
-40C
-2
-3
-4
-5
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Failsafe Mode -
Input Return Loss vs. Temperature
0
-5
+25C
+85C
-40C
-10
-15
-20
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Failsafe Mode -
Output Return Loss vs. Temperature
0
-5
+25C
+85C
-40C
-10
-15
-20
-25
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
5 - 288
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC669LP3E.PDF ] | |
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