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PDF HMC741ST89E Data sheet ( Hoja de datos )
| Número de pieza | HMC741ST89E | |
| Descripción | InGaP HBT Active Bias MMIC Amplifier | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0209
Typical Applications
9 The HMC741ST89E is ideal for:
• Cellular/3G & WiMAX/4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
HMC741ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Features
P1dB Output Power: +18.5 dBm
Gain: 20 dB
Output IP3: +42 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
Robust 1000V ESD, Class 1C
Stable Current Over Temperature
Active Bias Network
General Description
The HMC741ST89E is an InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering 0.05 to 3 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF or IF gain stage as well
as a PA or LO driver with up to +18.5 dBm output
power. The HMC741ST89E offers 20 dB of gain with
a +42 dBm output IP3 at 200 MHz, and can operate
directly from a +5V supply. The HMC741ST89E
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
Electrical Specifications, Vcc = 5V, TA = +25° C
Parameter
Min. Typ.
Frequency Range
0.05 - 1
Gain
16 20
Gain Flatness
±0.3
Gain Variation over Temperature
0.004
Input Return Loss
16
Output Return Loss
17
Reverse Isolation
25
Output Power for 1 dB Compression (P1dB)
16 18.8
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
40.5
Noise Figure
2.5
Supply Current (Icq)
96
Max.
0.01
Min.
Typ.
Max.
Units
0.05 - 3
GHz
12 19
dB
±2.6
dB
0.004
0.01 dB/ °C
12 dB
12 dB
26 dB
14 16
dBm
30 dBm
2.5 dB
96 mA
9 - 182
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
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v00.0209
9
Output IP3 vs. Vcc
50
45
40
35
30
25
20 4.5V
5.0V
15 5.5V
10
5
0
0 0.5 1 1.5 2
FREQUENCY (GHz)
2.5
3
P1dB vs. Temperature
20
15
10
+25C
+85C
-40C
5
0
0 0.5 1 1.5 2 2.5 3
FREQUENCY (GHz)
Power Compression @ 500 MHz
25
20
15
Pout
Gain
PAE
10
5
0
-5
-20 -17 -14 -11 -8
-5
INPUT POWER (dBm)
-2
1
HMC741ST89E
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Current vs. Temperature
140
120
+25C
+85C
-40C
100
80
60
40
4.5
4.75
5
VOLTAGE (V)
5.25
5.5
Psat vs. Temperature
20
15
10
+25C
+85C
-40C
5
0
0 0.5 1 1.5 2 2.5 3
FREQUENCY (GHz)
Power Compression @ 2 GHz
25
20
15
Pout
Gain
10 PAE
5
0
-5
-20 -17 -14 -11 -8
-5
INPUT POWER (dBm)
-2
1
9 - 186
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC741ST89E.PDF ] | |
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