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Numéro de référence | 2SA1625 | ||
Description | Plastic-Encapsulated Transistors | ||
Fabricant | TRANSYS | ||
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1 Page
Transys
www.DataSheet4U.comElectronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA1625 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 750 mW (Tamb=25℃)
Collector current
ICM : -0.5
Collector-base voltage
A
V(BR)CBO : -400 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on Time
Storage Time
Fall-Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-400V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-50mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
VCC=-150V, Ic=-100mA,
IB!=IB2-10mA, RL=1.5KΩ
MIN TYP MAX UNIT
-400
V
-400
V
-7 V
-1 µA
-1 µA
40 200
-1 V
-1.2 V
10 MHz
20 40
pF
1 µs
5 µs
1 µs
CLASSIFICATION OF hFE(1)
Rank
Range
M
40-80
L
60-120
K
100-200
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Pages | Pages 1 | ||
Télécharger | [ 2SA1625 ] |
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