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Numéro de référence | LF2805A | ||
Description | RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz | ||
Fabricant | Tyco Electronics | ||
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RF MOSFET Power Transistor, 5W, 28V
500 - 1000 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
AppIications
. *Broadband Linear Operation
500 MHz to 1400 MHz
Absolute Maximum Ratings at 25°C
LF2805A
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
lest Conditions
Drain-Source Breakdown Voltage
BV,,, 65 - V V,,=O.O V, 1,,=2.0 mA
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
‘Dss
- 1.0 mA V,,=28.0 V, V,,=O.O V
IGSS 1.0 p-4 v,,=20 v, v,,=o.o v
VGSCTW
2.0
6.0
V V&O.0 V, l,,=lO.O mA
GM 80 - mS V&O.0 V, i&00.0 mA, AVGs=l .O V, 80 us Puke
CISS 7 PF V&8.0 V, F-l.0 MHz
Coss
5 PF V,,=28.0 V, F-1 .OMHz
CRSS
2.4 pF V,,=28.0 V, F=l .OMHz
GP 10 - dB V,,d8.0 V, I,,=50 mA, PO,+0 W, F=l .OGHz
‘1D 50 - % V,,=28.0 V, I,,=50 mA, P,s5.0 W, F=l .OGHz
VSWR-T
-
2O:l
- V,,=28.0 V, I,,=50 mA, P,&%O W, F=l .OGHz
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Pages | Pages 3 | ||
Télécharger | [ LF2805A ] |
No | Description détaillée | Fabricant |
LF2805A | RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz | Tyco Electronics |
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