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PDF MA4ZD03 Data sheet ( Hoja de datos )
| Número de pieza | MA4ZD03 | |
| Descripción | Schottky Barrier Diodes (SBD) Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Schottky Barrier Diodes (SBD)
MA4ZD03www.DataSheet4U.com
Silicon epitaxial planar type
For high speed switching
For small type power supply
For DC/DC converter
I Features
• Two isolated elements are contained in one package, allowing
high-density mounting
• IF = 100 mA rectification is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• S-Mini type 4-pin package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Forward current (DC) Single
Double
IF
100 mA
75
Peak forward
Single
IFM
300
mA
current
Double
225
Non-repetitive peak Single
forward-surge-current * Double
IFSM
1
0.75
A
Reverse voltage (DC)
Repetitive peak reverse-voltage
Junction temperature
Storage temperature
VR
VRRM
Tj
Tstg
45
45
125
−55 to +125
V
V
°C
°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2.1±0.1
1.3±0.1
4
3
12
0.3±0.05
5°
Unit: mm
0.7±0.1
0.16+–00..016
1 : Anode 1
2 : Anode 2
EIAJ : SC-82
3 : Cathode 2
4 : Cathode 1
SMini4-F1 Package
Marking Symbol M5A
Internal Connection
43
12
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time *
IR VR = 40 V
VF IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
5
0.54 0.60
12 18
1.2
µA
V
pF
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: August 2001
SKH00110AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA4ZD03.PDF ] | |
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